黃火林， 現(xiàn)任大連理工大學(xué)光電工程與儀器科學(xué)學(xué)院副教授，碩士生導(dǎo)師。2016年入選大連市青年科技之星。2006年7月和2011年7月于廈門(mén)大學(xué)物理系分別獲得學(xué)士和博士學(xué)位，2011年8月至2014年10月在新加坡國(guó)立大學(xué)（NUS）電機(jī)工程系（ECE）從事新一代GaN材料功率電子器件研制工作，期間負(fù)責(zé)帶領(lǐng)多名博士生開(kāi)展《高壓高功率氮化鎵材料功率電子器件技術(shù)研發(fā)》重大項(xiàng)目。該項(xiàng)目典型成果是獲得+5V閾值電壓和超過(guò)1200V擊穿電壓性能的常關(guān)型（增強(qiáng)型）功率器件，以及基于無(wú)金（Au-free）工藝技術(shù)的+2V閾值電壓和600V擊穿電壓的常關(guān)型功率器件，項(xiàng)目指標(biāo)達(dá)到同期國(guó)際先進(jìn)水平。2014年12月被引進(jìn)大連理工大學(xué)，主要繼續(xù)從事GaN材料功率電子器件技術(shù)以及新型GaN材料光電磁傳感器集成技術(shù)工作，在GaN電子器件技術(shù)方向至今已在IEEE Electron Device Letters、IEEE Transactions on Power Electronics等重要學(xué)術(shù)期刊和國(guó)際會(huì)議上發(fā)表學(xué)術(shù)論文數(shù)十篇，作為第一發(fā)明人已經(jīng)申請(qǐng)和授權(quán)專利十余項(xiàng)。

主持課題：
1、基于縱向短?hào)艠O溝道結(jié)構(gòu)的低導(dǎo)通電阻常關(guān)型GaN基HEMT器件制備研究（國(guó)家自然科學(xué)基金項(xiàng)目）
2、多重2DEG溝道和凹槽柵組合GaN MOS-HEMT器件的研制（安徽省自然科學(xué)研究 重大項(xiàng)目）
3、低導(dǎo)通電阻大閾值電壓常關(guān)型AlGaN/GaN基HEMT器件制備研究（遼寧省教育廳項(xiàng)目）
4、常關(guān)型GaN基功率器件的仿真與制作、基于柵極溝道再生長(zhǎng)技術(shù)的GaN材料HEMT器件研制（中央高?；究蒲袠I(yè)務(wù)經(jīng)費(fèi)--引進(jìn)人才專項(xiàng)、理科專項(xiàng)等）

5、中科院半導(dǎo)體所、蘇州納米所等多項(xiàng)重點(diǎn)實(shí)驗(yàn)室開(kāi)放課題和滾動(dòng)支持

代表性論文：

[1] H. Huang*, Z. Sun, Y. Cao, et al., Investigation of Surface Traps-Induced Current Collapse Phenomenon in AlGaN/GaN High Electron Mobility Transistors with Schottky Gate Structures, J. Phys. D: Appl. Phys., vol. 51, p. 345102, 2018 (SCI, JCR-2區(qū)).

[2] H. Huang*, F. Li, Z. Sun, and Y. Cao, Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices, Micromachines, vol. 9, p. 658, 2018 (SCI, JCR-2區(qū)).

[3] H. Huang*, Z. Sun, F. Zhang, et al., Analytical model for accurate extraction of metal-semiconductor ohmic contact parameters using a novel electrode-pair layout scheme, Physica E, vol. 108, pp. 197-201, 2019 (SCI, JCR-2區(qū)).

[4] H. Huang*, F. Li, Z. Sun, et al., Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Block Layer Structure, Electronics, vol. 8, p. 241, 2019 (SCI, JCR-2區(qū)).

[5] H. Huang*, F. Li, Z. Sun, et al., Proposal and Demonstration of GaN-Based Normally-Off Vertical Field-Effect Transistor with a Design of Back Current Block Layer, Key Eng. Mater., vol. 787, pp. 69-73, 2018 (EI).

[6] H. Huang*, Y. Cao, et al., Improved Wide-bandgap Gallium Nitride Hall Sensors for High Temperature Applications, 2019 Collaborative Conference on Materials Research (CCMR), Goyang, South Korea, June 3-7, pp. **-**, 2019 (SCI).

[7] H. Huang*, Z. Sun, et al., Performance-Improved Normally-off AlGaN/GaN High-Electron Mobility Transistors with a Designed p-GaN Area under the Recessed Gate, 13rd IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Hangzhou, pp. 1230-1232, 2016 (EI).

[8] Z. Sun, H. Huang*, et al., Improved On-Resistance and Breakdown Voltage Vertical GaN-based Field Effect Transistors, 13rd IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Hangzhou, pp. 1101-1103, 2016 (EI).

[9] H. Huang*, Z. Sun, Y. Cao, et al., A New Method for Extracting Ohmic Contact Parameters Obtaining the specific contact resistance from transmission line model measurements, 2018 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, Xi'an, pp. 153-156, 2018 (EI).

[10] H. Huang* and Y.C. Liang, 'Formation of combined partially recessed and multiple fluorinated-dielectric layers gate structures for high threshold voltage GaN-based HEMT power devices', Solid-State Electronics 114, 148-154, 2015 (SCI, JCR-3區(qū)).

[11] H. Huang, Yung C. Liang, Ganesh S. Samudra, Ting-Fu Chang, and Chih-Fang Huang, “Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTs”, IEEE Trans. Power Electron. 29, 2164-2173, 2014 (SCI, JCR-1區(qū)).

[12] H Huang, Yung C. Liang, Ganesh S. Samudra, and Cassandra Low Lee Ngo, “Au-Free Normally-off AlGaN/GaN-on-Si MIS-HEMTs using Combined Partially Recessed and Fluorinated Trap-Charge Gate Structures”, IEEE Electron Device Lett. 35, pp. 569-571, 2014 (SCI, JCR-1區(qū)).

[13] H. Huang*, Y. Xie, et al., “Growth and fabrication of sputtered TiO2 based ultraviolet detectors”, Appl. Surf. Sci. 293, pp. 248-254, 2014, (SCI, JCR-1區(qū)).

[14] H. Huang, Y. Xie, et al., “Low-Dark-Current TiO2 MSM UV Photodetectors with Pt Schottky Contacts”, IEEE Electron Device Lett. 32, pp. 530-532, 2011 (SCI, JCR-1區(qū)).

[15] H. Huang*, W. Yang, et al., “Metal-semiconductor-metal ultraviolet photodetectors based on TiO2 films deposited by radio frequency magnetron sputtering”, IEEE Electron Device Lett. 31, pp. 588-590, 2010 (SCI, JCR-1區(qū)).

[16] H. Huang*, Y.-H. Wang, et al., 'Formation of Gate Structure by Multiple Fluorinated Dielectric Layers on Partially Recessed Barrier for High Threshold Voltage AlGaN/GaN Power HEMTs', 11th International Conference on Nitride Semiconductors (ICNS-11), 2015, August 30 - September 4, Beijing, China.

[17] H. Huang, Y.-H. Wang, et al., “5V High Threshold Voltage Normally-off MIS-HEMTs with Combined Partially Recessed and Multiple Fluorinated-Dielectric Layers Gate Structures”, 46th SSDM 2014, September 8-11, 2014, Ibaraki, Japan.

[18] H. Huang, Y. C. Liang, G. S. Samudra, and C.-F. Huang, “Design of Novel Normally-off AlGaN/GaN HEMTs with Combined Gate Recess and Floating Charge Structures”, IEEE PEDS 2013, April 22-25, 2013, Kitakyushu, Japan.

[19] H. Huang, Y. C. Liang, and G. S. Samudra, “Theoretical Calculation and Efficient Simulations of Power Semiconductor AlGaN/GaN HEMTs”, IEEE EDSSC 2012, December 3-5, 2012, Chulalongkorn University, Bangkok, Thailand.

[20] H. Huang, Y. C. Liang, et al., “Modelling and Simulations on Current Collapse in AlGaN/GaN Power HEMTs”, SISPAD 2012, September 5-7, 2012, Denver, CO, USA.

近三年主要申請(qǐng)和授權(quán)發(fā)明專利：

[1] 黃火林、孫仲豪等，具有縱向柵極結(jié)構(gòu)的常關(guān)型HEMT器件及其制備方法，專利號(hào)：ZL201610109041.3，授權(quán)公告日：2018.06.19

[2] 黃火林，具有三明治柵極介質(zhì)結(jié)構(gòu)的HEMT器件及其制備方法，專利號(hào)：ZL201510392175.6，授權(quán)公告日：2018.04.10

[3] 黃火林、梁紅偉等，一種縱向短開(kāi)啟柵極溝道型HEMT器件及其制備方法，專利號(hào)：ZL201510319284.5，授權(quán)公告日：2018.04.27

[4] 黃火林、孫仲豪等，一種具有局部電流阻擋層的縱向柵極結(jié)構(gòu)功率器件及其制備方法，公布號(hào)：CN109037327A，已公布，公布日：2018.12.18

[5] 黃火林、孫仲豪，半縱向型歐姆接觸電極及其制作方法，公布號(hào)：CN108682687A，已公布，公布日：2018.10.19

[6] 黃火林、李飛雨等，一種具有P型埋層結(jié)構(gòu)的增強(qiáng)型HEMT器件及其制備方法，公布號(hào)：CN109037326A，已公布，公布日：2018.12.18

[7] 黃火林、孫仲豪等，一種歐姆接觸電極有效寬度的計(jì)算和判定方法，公布號(hào)：CN108197359A，已公布，公布日：2018.06.22

[8] 黃火林、孫仲豪等，一種半導(dǎo)體電極歐姆接觸電阻參數(shù)提取方法，公布號(hào)：CN108170910A，已公布，公布日：2018.06.15

[9] 黃火林、曹亞慶等，二維電子氣溝道半耗盡型霍爾傳感器及其制作方法，公布號(hào)：CN108649117A，已公布，公布日：2018.10.12

[10] 黃火林、曹亞慶等，具有二維電子氣溝道勢(shì)壘層局部凹槽結(jié)構(gòu)的霍爾傳感器及其制作方法，公布號(hào)：CN108321291A，已公布，公布日：2018.07.24

[11] 黃火林、曹亞慶等，適用于高溫工作環(huán)境的半導(dǎo)體三維霍爾傳感器及其制作方法，公布號(hào)：CN107966669A，已公布，公布日：2018.04.27

[12] 孫仲豪、黃火林，具有極化結(jié)縱向泄漏電流阻擋層結(jié)構(gòu)的HEMT器件及其制備方法，公布號(hào)：CN109004017A，已公布，公布日：2018.12.14